PART |
Description |
Maker |
MC-242443F9-B10-BT3 MC-242443F9-B90-BT3 |
MCP(32M-bit flash memory 16M-bit mobile specified RAM)
|
NEC
|
MC-242452F9-B10-BT3 MC-242452F9-B90-BT3 |
MCP(32M-bit flash memory 16M-bit mobile specified RAM)
|
NEC
|
M6MGD137W3 M6MGD137W33TP |
The M6MGD137W33TP is a Stacked micro Multi Chip
Package (S- mMCP) that contents 128M-bit Flash memory
and 32M-bit Mobile RAM in a 52-pin TSOP.
|
RENESAS
|
S70WS512N00BAWA30 S70WS512N000BAWA33 |
32M X 16 FLASH 1.8V PROM, 80 ns, PBGA84 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
|
SPANSION LLC
|
MBM29DL321TD-80 MBM29DL321TD-80PBT MBM29DL321TD-80 |
FLASH MEMORY 32M (4M x 8/2M x 16) BIT Dual Operation CMOS 32M (4M x 8/2M x16) bit dual operation
|
Fujitsu Microelectronics
|
TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
M6MGD137W34DWG |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
KM23C32205BSG |
32M-Bit (2Mx16 /1Mx32) CMOS Mask ROM(32M(2Mx16 /1Mx32) CMOS掩膜ROM) 32兆位Mx16 / 1Mx32)的CMOS掩模ROM2兆位Mx16 / 1Mx32)的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
KM23V32000CT KM23V32000CET |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM) 32兆位Mx8 / 2Mx16)的CMOS掩模ROM2兆位Mx8 / 2Mx16)的CMOS掩膜光盘
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
HYS64V32300GU HYS72V32300GU |
3.3 V 32M × 64-Bit SDRAM Module(3.3 V 32M × 64同步动态RAM模块) 3.3 V 32M × 72-Bit SDRAM Module(3.3 V 32M × 72同步动态RAM模块)
|
SIEMENS AG
|
S29JL032H90TAI221 S29JL032H70TFI220 S29JL032H70TAI |
32M BIT CMOS 3.0V FLASH MEMORY
|
SPANSION[SPANSION]
|
MX29LV033ATI-70 MX29LV033ATI-70G MX29LV033ATI-90 M |
32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY
|
List of Unclassifed Manufacturers
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